HUASHUO · FETs & Power MOSFETs · MPN HSCB10P02
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| Gate Charge(Qg) | 32nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 689pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 584pF |
| RDS(on) | 25mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.65nF |
| Type | P-Channel |
P-Channel 20V 10A 3.5W Surface Mount DFN2x2-6L