HUASHUO · FETs & Power MOSFETs · MPN HSCB0012
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 3.5nC@10V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 3W |
| RDS(on) | 130mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
N-Channel 100V 3A 3W Surface Mount DFN-6L(2x2)