HUASHUO · FETs & Power MOSFETs · MPN HSCB0010E
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| Gate Charge(Qg) | 6.6nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 82pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 39mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 336pF |
| Type | N-Channel |
100V 6A 3V 3.5W 39mΩ@10V 1 N-channel N-Channel DFN-6L(2x2) Single FETs, MOSFETs RoHS