HUASHUO HSBL020N08

HUASHUO · FETs & Power MOSFETs · MPN HSBL020N08

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Specifications

Gate Charge(Qg)204nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)240A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation225W
RDS(on)2mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)580pF
Number1 N-channel
Input Capacitance(Ciss)13.65nF
TypeN-Channel

Technical details

N-Channel 80V 240A 225W Surface Mount TOLL

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