HUASHUO · FETs & Power MOSFETs · MPN HSBG3132
No reviews yet — be the first to review HUASHUO HSBG3132.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 600pC@4.5V |
| Current - Continuous Drain(Id) | 1.5A |
| Output Capacitance(Coss) | 12pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 1.2W |
| RDS(on) | 220mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16pF |
| Type | N-Channel |
30V 1.5A 800mV 1.2W 220mΩ@4.5V 1 N-channel N-Channel DFN1006-3 Single FETs, MOSFETs RoHS