HUASHUO · FETs & Power MOSFETs · MPN HSBG2N7002K
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 850pC@10V |
| Output Capacitance(Coss) | 8.5pF |
| Current - Continuous Drain(Id) | 500mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 1.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 1.4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 28pF |
| Type | N-Channel |
60V 500mA 1.6V 1.1W 1.4Ω@10V 1 N-channel N-Channel DFN1006-3 Single FETs, MOSFETs RoHS