HUASHUO · FETs & Power MOSFETs · MPN HSBG2302
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 2.3nC@4.5V |
| Output Capacitance(Coss) | 24pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 62mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 196pF |
| Type | N-Channel |
20V 2A 600mV 300mW 62mΩ@4.5V 1 N-channel N-Channel DFN1006-3 Single FETs, MOSFETs RoHS