HUASHUO · FETs & Power MOSFETs · MPN HSBG2301
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 3nC@4.5V |
| Current - Continuous Drain(Id) | 2A |
| Output Capacitance(Coss) | 30pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 550mV |
| Pd - Power Dissipation | 270mW |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 130mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 248pF |
| Type | P-Channel |
20V 2A 550mV 270mW 130mΩ@4.5V 1 P-Channel P-Channel DFN1006-3 Single FETs, MOSFETs RoHS