HUASHUO · FETs & Power MOSFETs · MPN HSBG2103
No reviews yet — be the first to review HUASHUO HSBG2103.
| Gate Charge(Qg) | 8nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 650mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 150mW |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 520mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 120pF |
| Type | P-Channel |
P-Channel 20V 650mA 150mW Surface Mount DFN1006-3