HUASHUO · FETs & Power MOSFETs · MPN HSBG2024
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| Gate Charge(Qg) | 1.2nC@4.5V |
|---|---|
| Configuration | - |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 1.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Pd - Power Dissipation | 700mW |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 234mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 44pF |
N-Channel 20V 1.4A 0.7W Surface Mount DFN1006-3