HUASHUO HSBE2738

HUASHUO · FETs & Power MOSFETs · MPN HSBE2738

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Specifications

Gate Charge(Qg)13nC@4.5V
Configuration-
Drain to Source Voltage20V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.47W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)9.5mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)735pF

Technical details

N-Channel Array 20V 12A 1.47W Surface Mount PRPAK(3x3)

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