HUASHUO · FETs & Power MOSFETs · MPN HSBE2730
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| Gate Charge(Qg) | 9.86nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.47W |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF |
| RDS(on) | 17mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
N-Channel Array 20V 7A 1.47W PRPAK-EP(3x3)