HUASHUO HSBB8066

HUASHUO · FETs & Power MOSFETs · MPN HSBB8066

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)29nC@10V
Output Capacitance(Coss)317pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation45W
RDS(on)8.7mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)1.738nF
TypeN-Channel

Technical details

N-Channel 80V 50A 45W PRPAK3x3-8L

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