HUASHUO HSBB70N02

HUASHUO · FETs & Power MOSFETs · MPN HSBB70N02

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)37nC@10V
Output Capacitance(Coss)360pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation40W
RDS(on)3.8mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)40pF
Number1 N-channel
Input Capacitance(Ciss)3.05nF
TypeN-Channel

Technical details

N-Channel 20V 70A 40W PRPAK3x3-8L

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