HUASHUO · FETs & Power MOSFETs · MPN HSBB6903
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 19nC@4.5V;9.7nC@4.5V |
| Current - Continuous Drain(Id) | 5.5A;4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF;70pF |
| RDS(on) | 75mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.031nF;1.444nF |
N-Channel+P-Channel Array 60V 5.5A 4A 2W PRPAK3x3-8L