HUASHUO HSBB6903

HUASHUO · FETs & Power MOSFETs · MPN HSBB6903

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)19nC@4.5V;9.7nC@4.5V
Current - Continuous Drain(Id)5.5A;4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)46pF;70pF
RDS(on)75mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.031nF;1.444nF

Technical details

N-Channel+P-Channel Array 60V 5.5A 4A 2W PRPAK3x3-8L

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