HUASHUO · FETs & Power MOSFETs · MPN HSBB6258
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 13nC@10V |
| Output Capacitance(Coss) | 171pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 26W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 15mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 512pF |
| Type | N-Channel |
60V 20A 1.9V 26W 15mΩ@10V 2 N-Channel N-Channel PRPAK-8(3x3) Single FETs, MOSFETs RoHS