HUASHUO · FETs & Power MOSFETs · MPN HSBB6214
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| Gate Charge(Qg) | 19nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 21W |
| RDS(on) | 42mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 46pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.027nF |
N-Channel Array 60V 16A 21W PRPAK3x3-8L