HUASHUO HSBB6115

HUASHUO · FETs & Power MOSFETs · MPN HSBB6115

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Specifications

Gate Charge(Qg)25nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)224pF
Current - Continuous Drain(Id)26A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation5.2W
Reverse Transfer Capacitance (Crss@Vds)141pF
RDS(on)20mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.635nF
TypeP-Channel

Technical details

P-Channel 60V 26A 5.2W PRPAK3x3-8L

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