HUASHUO · FETs & Power MOSFETs · MPN HSBB60P02
No reviews yet — be the first to review HUASHUO HSBB60P02.
| Gate Charge(Qg) | 41nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 689pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 31W |
| Reverse Transfer Capacitance (Crss@Vds) | 611pF |
| RDS(on) | 5.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.883nF |
| Type | P-Channel |
P-Channel 20V 60A 31W PRPAK3x3-8L