HUASHUO HSBB6066

HUASHUO · FETs & Power MOSFETs · MPN HSBB6066

No reviews yet — be the first to review HUASHUO HSBB6066.

Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)438pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)5.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.67nF
TypeN-Channel

Technical details

N-Channel 60V 60A 45W PRPAK3x3-8L

Related FETs & Power MOSFETs