HUASHUO · FETs & Power MOSFETs · MPN HSBB6058
No reviews yet — be the first to review HUASHUO HSBB6058.
| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 11.7nC@10V |
| Current - Continuous Drain(Id) | 29A |
| Output Capacitance(Coss) | 171pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 20.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 512pF |
| Type | N-Channel |
60V 29A 1.6V 20.8W 12mΩ@10V 1 N-channel N-Channel PRPAK-8(3x3) Single FETs, MOSFETs RoHS