HUASHUO · FETs & Power MOSFETs · MPN HSBB4903
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| Gate Charge(Qg) | 6nC@4.5V;9nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 20A;18A |
| Output Capacitance(Coss) | 80pF;102pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 21W |
| RDS(on) | 30mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 602pF;1.168nF |
| Type | N-Channel + P-Channel |
40V 1.5V 21W 30mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel PRPAK-8(3x3) Single FETs, MOSFETs RoHS