HUASHUO · FETs & Power MOSFETs · MPN HSBB4600
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 20nC@4.5V;33nC@4.5V |
| Current - Continuous Drain(Id) | 12A;10A |
| Output Capacitance(Coss) | 225pF;194pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 203pF;158pF |
| RDS(on) | 7.8mΩ@4.5V;17mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.65nF;1.25nF |
| Type | N-Channel + P-Channel |
20V 700mV 40W 1 N-Channel + 1 P-Channel N-Channel + P-Channel PDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS