HUASHUO HSBB4252

HUASHUO · FETs & Power MOSFETs · MPN HSBB4252

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Specifications

Gate Charge(Qg)5.8nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation21W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)10mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)690pF
TypeN-Channel

Technical details

N-Channel Array 40V 30A 21W PRPAK3x3-8L

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