HUASHUO HSBB4202

HUASHUO · FETs & Power MOSFETs · MPN HSBB4202

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Specifications

Gate Charge(Qg)5.5nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)76pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation21W
Reverse Transfer Capacitance (Crss@Vds)56pF
RDS(on)30mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)593pF
TypeN-Channel

Technical details

40V 20A 2.5V 21W 30mΩ@10V 2 N-Channel N-Channel PRPAK-8(3x3) Single FETs, MOSFETs RoHS

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