HUASHUO HSBB4115

HUASHUO · FETs & Power MOSFETs · MPN HSBB4115

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Specifications

Gate Charge(Qg)27.9nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)39A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation52.1W
Reverse Transfer Capacitance (Crss@Vds)222pF
RDS(on)13mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.5nF
TypeP-Channel

Technical details

P-Channel 40V 39A 52.1W PRPAK3x3-8L

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