HUASHUO HSBB4076

HUASHUO · FETs & Power MOSFETs · MPN HSBB4076

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Specifications

Configuration-
Drain to Source Voltage40V
Gate Charge(Qg)35nC@10V
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)2.9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 40V 130A 60W PRPAK3x3-8L

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