HUASHUO HSBB4056

HUASHUO · FETs & Power MOSFETs · MPN HSBB4056

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Specifications

Gate Charge(Qg)13nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)513pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.35nF
TypeN-Channel

Technical details

40V 60A 1.8V 30W 3.9mΩ@10V 1 N-channel N-Channel PRPAK-8(3x3) Single FETs, MOSFETs RoHS

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