HUASHUO · FETs & Power MOSFETs · MPN HSBB3P20
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 82nC@10V |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 810mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.155nF |
| Type | P-Channel |
P-Channel 200V 3A 30W PRPAK3x3-8L