HUASHUO · FETs & Power MOSFETs · MPN HSBB3909
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 7.2nC@4.5V |
| Current - Continuous Drain(Id) | 24A;27A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 20W |
| RDS(on) | - |
| Reverse Transfer Capacitance (Crss@Vds) | 234pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 2.213nF |
N-Channel+P-Channel Array 30V 24A 27A 20W PRPAK3x3-8L