HUASHUO · FETs & Power MOSFETs · MPN HSBB35P02
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 42nC@4.5V |
| Current - Continuous Drain(Id) | 35A |
| Output Capacitance(Coss) | 529pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 620mV |
| Pd - Power Dissipation | 40W |
| RDS(on) | 7.9mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 421pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.483nF |
| Type | P-Channel |
20V 35A 620mV 40W 7.9mΩ@4.5V 1 P-Channel P-Channel PRPAK-8(3x3) Single FETs, MOSFETs RoHS