HUASHUO · FETs & Power MOSFETs · MPN HSBB3313
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| Gate Charge(Qg) | 9.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 21W |
| Reverse Transfer Capacitance (Crss@Vds) | 118pF |
| RDS(on) | 40mΩ@10V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 945pF |
P-Channel 30V 19A 21W PRPAK3x3-8L