HUASHUO HSBB3303

HUASHUO · FETs & Power MOSFETs · MPN HSBB3303

No reviews yet — be the first to review HUASHUO HSBB3303.

Specifications

Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)12.6nC@4.5V
Output Capacitance(Coss)194pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)158pF
RDS(on)23mΩ@10V
Number2 P-Channel
Input Capacitance(Ciss)1.345nF

Technical details

P-Channel 30V 35A 35W PRPAK3x3-8L

Related FETs & Power MOSFETs