HUASHUO HSBB3254

HUASHUO · FETs & Power MOSFETs · MPN HSBB3254

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Specifications

Gate Charge(Qg)9nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)5.1mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)1.113nF

Technical details

N-Channel Array 30V 30A 25W PRPAK3x3-8L

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