HUASHUO · FETs & Power MOSFETs · MPN HSBB3202
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 7.2nC@4.5V |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 20.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 18mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 572pF |
N-Channel Array 30V 28A 20.8W PRPAK3x3-8L