HUASHUO HSBB3115

HUASHUO · FETs & Power MOSFETs · MPN HSBB3115

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Specifications

Gate Charge(Qg)30nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)421pF
RDS(on)-
Number1 P-Channel
Input Capacitance(Ciss)3.448nF

Technical details

P-Channel 30V 55A 38W PRPAK3x3-8L

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