HUASHUO HSBB3105

HUASHUO · FETs & Power MOSFETs · MPN HSBB3105

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Specifications

Gate Charge(Qg)22nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)237pF
RDS(on)-
Number1 P-Channel
Input Capacitance(Ciss)2.215nF
TypeP-Channel

Technical details

P-Channel 30V 42A 37W PRPAK3x3-8L

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