HUASHUO · FETs & Power MOSFETs · MPN HSBB3080C
No reviews yet — be the first to review HUASHUO HSBB3080C.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 21nC@4.5V |
| Output Capacitance(Coss) | 960pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 27W |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.42nF |
| Type | N-Channel |
30V 60A 1.8V 27W 1.7mΩ@10V 1 N-channel N-Channel PRPAK-8(3x3) Single FETs, MOSFETs RoHS