HUASHUO HSBB3072

HUASHUO · FETs & Power MOSFETs · MPN HSBB3072

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Specifications

Gate Charge(Qg)26nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)1.3nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation42W
RDS(on)2.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)229pF
Number1 N-channel
Input Capacitance(Ciss)2.86nF
TypeN-Channel

Technical details

N-Channel 30V 100A 42W PRPAK3x3-8L

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