HUASHUO HSBB3068

HUASHUO · FETs & Power MOSFETs · MPN HSBB3068

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)16.5nC@10V
Output Capacitance(Coss)370pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation24W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)900pF
TypeN-Channel

Technical details

30V 40A 1.7V 24W 4mΩ@10V 1 N-channel N-Channel PRPAK-8(3x3) Single FETs, MOSFETs RoHS

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