HUASHUO · FETs & Power MOSFETs · MPN HSBB3062B
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 4.2nC@4.5V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 26W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 10.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 396pF |
| Type | N-Channel |
30V 36A 1.7V 26W 10.5mΩ@10V 1 N-channel N-Channel PRPAK-8(3x3) Single FETs, MOSFETs RoHS