HUASHUO · FETs & Power MOSFETs · MPN HSBB3060
No reviews yet — be the first to review HUASHUO HSBB3060.
| Gate Charge(Qg) | 4.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 21W |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 9.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 562pF |
N-Channel 30V 45A 21W PRPAK3x3-8L