HUASHUO · FETs & Power MOSFETs · MPN HSBB3056
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| Gate Charge(Qg) | 14.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 27W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 3.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.476nF |
N-Channel 30V 35A 27W PRPAK3x3-8L