HUASHUO · FETs & Power MOSFETs · MPN HSBB3006
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| Gate Charge(Qg) | 20nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 65A |
| Output Capacitance(Coss) | 267pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.295nF |
| Type | N-Channel |
30V 65A 2.5V 40W 3mΩ@10V 1 N-channel N-Channel PRPAK-8(3x3) Single FETs, MOSFETs RoHS