HUASHUO HSBB3004

HUASHUO · FETs & Power MOSFETs · MPN HSBB3004

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Specifications

Gate Charge(Qg)12.8nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)46A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation29W
Reverse Transfer Capacitance (Crss@Vds)131pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.317nF

Technical details

N-Channel 30V 46A 29W PRPAK3x3-8L

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