HUASHUO HSBB3002

HUASHUO · FETs & Power MOSFETs · MPN HSBB3002

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Specifications

Gate Charge(Qg)7.2nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)572pF

Technical details

N-Channel 30V 28A 20W PRPAK3x3-8L

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