HUASHUO · FETs & Power MOSFETs · MPN HSBB2627
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| Gate Charge(Qg) | 63nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 29W |
| Reverse Transfer Capacitance (Crss@Vds) | 431pF |
| RDS(on) | 9mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.783nF |
P-Channel 20V 48A 29W PRPAK3x3-8L