HUASHUO · FETs & Power MOSFETs · MPN HSBB15P16D
No reviews yet — be the first to review HUASHUO HSBB15P16D.
| Gate Charge(Qg) | 20nC@4.5V |
|---|---|
| Drain to Source Voltage | 16V |
| Output Capacitance(Coss) | 259pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 234pF |
| RDS(on) | 12.5mΩ@4.5V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.57nF |
| Type | P-Channel |
16V 15A 700mV 40W 12.5mΩ@4.5V 2 P-Channel P-Channel PRPAK-8(3x3) Single FETs, MOSFETs RoHS