HUASHUO HSBB15N20A

HUASHUO · FETs & Power MOSFETs · MPN HSBB15N20A

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)5.3pF
RDS(on)95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)887pF

Technical details

N-Channel 200V 15A 45W PRPAK3x3-8L

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