HUASHUO HSBB15N15S

HUASHUO · FETs & Power MOSFETs · MPN HSBB15N15S

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)19nC@4.5V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation45W
RDS(on)35mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-channel
Input Capacitance(Ciss)1.09nF

Technical details

N-Channel 150V 15A 45W PRPAK3x3-8

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